Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth

نویسندگان

  • Tadao Hashimoto
  • Edward Letts
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The Ammonothermal Crystal Growth of Gallium Nitride - A Technique on the Up Rise

| Gallium nitride (GaN) is one of the most important wide band gap semiconductor materials in modern technology with even higher expectations for future applications it is ought to play a crucial role. Among this, the growth of lattice and thermally matched GaN substrates for the GaN device technology takes an essential piece. This paper is reporting on the achievements in the ammonothermal gro...

متن کامل

Congruent Melting of GaN at High Pressures

Gallium nitride (GaN) is a very important material in optoelectronic devices for blue light-emitting diodes and lasers [1]. These devices are usually fabricated by epitaxial growth on sapphire (Al 2O3) substrates because larg e GaN single crystals are unavailable. There is a large mismatch in the lattice constants of sapphire and GaN, which causes high-density dislocations in the deposited laye...

متن کامل

Gallium Nitride on Silicon for Consumer & Scalable Photonics

Gallium Nitride (GaN) is a unique material system that has been heavily exploited for photonic devices thanks to ultraviolet-to-terahertz spectral tunability. However, without a cost effective approach, GaN technology is limited to laboratory demonstrations and niche applications. In this investigation, integration of GaN on Silicon (100) substrates is attempted to enable widespread application...

متن کامل

Graphene quilts for thermal management of high-power GaN transistors.

Self-heating is a severe problem for high-power gallium nitride (GaN) electronic and optoelectronic devices. Various thermal management solutions, for example, flip-chip bonding or composite substrates, have been attempted. However, temperature rise due to dissipated heat still limits applications of the nitride-based technology. Here we show that thermal management of GaN transistors can be su...

متن کامل

Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

Ever since Gallium Nitride based high electron mobility transistor (HEMT) operation was demonstrated (Khan, 1993), there is a tremendous interest in the design and growth of GaN based transistors for high power device applications. The nitride semiconductors have wide application in the fields of high electron mobility transistors (HEMTs), light emitting diodes, and various high power electroni...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017